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ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate source voltage
SYMBOL
V DSS
V GS
LIMIT
30
12
UNIT
V
V
Continuous drain current
@ V GS =4.5V; T A =25°C (b)
@ V GS =4.5V; T A =70°C (b)
@ V GS =4.5V; T A =25°C (a)
I D
8.9
7.3
7.2
A
A
A
Pulsed drain current
(c)
I DM
45
A
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T A =25°C (a)
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
Operating and storage temperature range
I S
I SM
P D
P D
T j :T stg
4.5
45
2
16
3
24
-55 to +150
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R JA
62.5
°C/W
Junction to ambient (b)
R JA
41.4
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
2
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